Mitsubishi Electric and Nexperia Partner To Develop Semiconductors

Mitsubishi Electric Corporation formed a strategic alliance with Nexperia B.V. to develop silicon carbide (SiC) power semiconductors for the power electronics sector. Mitsubishi Electric will use its wide-bandgap semiconductor technology to manufacture and provide SiC MOSFET chips for Nexperia to employ in the development of SiC discrete devices.

The electric vehicle market is expanding worldwide and is helping to drive the exponential growth of SiC power semiconductors, which offer lower energy loss, higher operating temperatures and faster switching speeds than conventional silicon power semiconductors. The high efficiency of SiC power semiconductors is expected to contribute significantly to global decarbonization and green transformation, as per business wire. 

Mitsubishi Electric has gained market leadership in high-speed trains, high-voltage industrial applications, and residential appliances. In 2010, the business introduced the first SiC power modules for air conditioners, and in 2015, it became the first provider of an all-SiC power module for Shinkansen bullet trains. Mitsubishi Electric has amassed outstanding competence in the research and production of SiC power modules, which are renowned for their superior performance and dependability.

Mitsubishi Electric Corporation is a Japanese multinational electronics and electrical equipment manufacturer based in Tokyo. It was founded in 1921 as a spin-off from Mitsubishi Shipbuilding's (present Mitsubishi Heavy Industries) electrical machinery manufacturing company at the Kobe Shipyard. Elevators and escalators, high-end home appliances, air conditioning, factory automation systems, rail systems, electric motors, pumps, semiconductors, digital signs, and satellites are among MELCO's products.